1
Transistor
2SD1280
Silicon NPN epitaxial planer type
For low-voltage type medium output power amplification
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
q
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC62
3:Emitter
Mini Power Type Package
4.5
0.1
2.6
0.1
2.5
0.1
0.4max.
1.0
+0.1
0.2
4.0
+0.25
0.20
3.0
0.15
1.5
0.1
0.4
0.08
0.5
0.08
1.5
0.1
0.4
0.04
1.6
0.2
45
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
20
20
5
2
1
1
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
BE(sat)
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 2V, I
C
= 500mA
*2
V
CE
= 2V, I
C
= 1.5A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 1A, I
B
= 50mA
*2
V
CB
= 6V, I
E
= 50mA, f = 200MHz
V
CB
= 6V, I
E
= 0, f = 1MHz
min
20
5
90
50
typ
150
100
150
18
max
1
360
1.2
0.5
Unit
A
V
V
V
V
MHz
pF
Marking symbol :
R
*1
h
FE1
Rank classification
Rank
Q
R
S
T
h
FE1
90 ~ 155
130 ~ 210
180 ~ 280
250 ~ 360
Marking Symbol
RQ
RR
RS
RT
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2
Transistor
2SD1280
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
CE(sat)
I
C
-- I
B
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
2.0
1.6
0.4
1.2
0.8
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25C
I
B
=5.0mA
4.5mA
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
0.5
0.4
0.1
0.3
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25C
I
C
/I
B
=10
20
Collector to emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A
)
0
12
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
=2V
Ta=25C
Base current I
B
(mA)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=20
25C
25C
Ta=75C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
25C
75C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
600
500
400
300
200
100
Ta=75C
25C
25C
V
CE
=2V
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
200
150
50
125
175
100
25
75
V
CB
=6V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
50
40
30
20
10
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
3
Transistor
2SD1280
I
CBO
-- Ta
I
CEO
-- Ta
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
1
10
10
2
10
3
10
4
V
CB
=10V
Ambient temperature Ta (C)
I
CBO
(Ta
)
I
CBO
(Ta=25C
)
0
160
40
120
80
140
20
100
60
1
10
10
2
10
3
10
5
10
4
V
CE
=18V
Ambient temperature Ta (C)
I
CEO
(Ta
)
I
CEO
(Ta=25C
)
0.1
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
Ta=25C
t=10ms
t=1s
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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